Manufacturer Product Number:
IPP023NE7N3GXKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPP023NE7N3GXKSA1-DG
Description:
MOSFET N-CH 75V 120A TO220-3
Detailed Description:
N-Channel 75 V 120A (Tc) 300W (Tc) Through Hole PG-TO220-3-1
Inventory:
460 Pcs New Original In Stock
12806021
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IPP023NE7N3GXKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
OptiMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.8V @ 273µA
Gate Charge (Qg) (Max) @ Vgs
206 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
14400 pF @ 37.5 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3
Base Product Number
IPP023
Datasheet & Documents
Datasheets
Additional Information
Other Names
IPP023NE7N3 G
IPP023NE7N3 G E8177-DG
IPP023NE7N3 GTR
IPP023NE7N3GCTINACTIVE
2156-IPP023NE7N3GXKSA1-448
IPP023NE7N3 GTR-DG
IPP023NE7N3GE8177AKSA1
IPP023NE7N3GDKRINACTIVE
IPP023NE7N3 G-DG
IPP023NE7N3 GCT
IPP023NE7N3 GDKR-DG
IPP023NE7N3 GCT-DG
IPP023NE7N3 GDKR
IPP023NE7N3 GDKRINACTIVE-DG
IPP023NE7N3 GCTINACTIVE-DG
IPP023NE7N3 G E8177
SP000641722
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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