Manufacturer Product Number:
IPP114N03LGHKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPP114N03LGHKSA1-DG
Description:
N-CHANNEL POWER MOSFET
Detailed Description:
N-Channel 30 V 30A (Tc) 38W (Tc) Through Hole PG-TO220-3-1
Inventory:
12496 Pcs New Original In Stock
12954963
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IPP114N03LGHKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Bulk
Series
OptiMOS™ 3
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
11.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
38W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3
Datasheet & Documents
Datasheets
Additional Information
Other Names
IFEINFIPP114N03LGHKSA1
2156-IPP114N03LGHKSA1
Standard Package
944
Environmental & Export Classification
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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