IPP65R050CFD7AAKSA1
Manufacturer Product Number:

IPP65R050CFD7AAKSA1

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IPP65R050CFD7AAKSA1-DG

Description:

MOSFET N-CH 650V 45A TO220-3
Detailed Description:
N-Channel 650 V 45A (Tc) 227W (Tc) Through Hole PG-TO220-3

Inventory:

12978134
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IPP65R050CFD7AAKSA1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
*
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
50mOhm @ 24.8A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs
102 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4975 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
227W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Base Product Number
IPP65R050

Datasheet & Documents

Additional Information

Other Names
448-IPP65R050CFD7AAKSA1
SP003793132
Standard Package
50

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
IPWS65R050CFD7AXKSA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
81
DiGi PART NUMBER
IPWS65R050CFD7AXKSA1-DG
UNIT PRICE
6.44
SUBSTITUTE TYPE
Parametric Equivalent
DIGI Certification
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