Manufacturer Product Number:
IPS65R1K5CEAKMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPS65R1K5CEAKMA1-DG
Description:
MOSFET N-CH 650V 3.1A TO251
Detailed Description:
N-Channel 650 V 3.1A (Tc) 28W (Tc) Through Hole TO-251
Inventory:
12803450
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IPS65R1K5CEAKMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
CoolMOS™ CE
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
10.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
225 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
28W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251
Package / Case
TO-251-3 Stub Leads, IPak
Base Product Number
IPS65R
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP001276050
ROCINFIPS65R1K5CEAKMA1
2156-IPS65R1K5CEAKMA1-IT
Standard Package
1,500
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IPS70R1K4P7SAKMA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
0
DiGi PART NUMBER
IPS70R1K4P7SAKMA1-DG
UNIT PRICE
0.18
SUBSTITUTE TYPE
Direct
DIGI Certification
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