IPU80R1K0CEAKMA1
Manufacturer Product Number:

IPU80R1K0CEAKMA1

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IPU80R1K0CEAKMA1-DG

Description:

MOSFET N-CH 800V 5.7A TO251-3
Detailed Description:
N-Channel 800 V 5.7A (Tc) 83W (Tc) Through Hole PG-TO251-3-341

Inventory:

RFQ Online
12823335
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IPU80R1K0CEAKMA1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
CoolMOS™ CE
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
950mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id
3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
785 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3-341
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
IPU80R1

Datasheet & Documents

Datasheets
IPU80R1K0CEAKMA1

Additional Information

Other Names
2156-IPU80R1K0CEAKMA1
SP001593928
INFINFIPU80R1K0CEAKMA1
Standard Package
1,500

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
TK6Q65W,S1Q
MANUFACTURER
Toshiba Semiconductor and Storage
QUANTITY AVAILABLE
75
DiGi PART NUMBER
TK6Q65W,S1Q-DG
UNIT PRICE
0.47
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
IPU80R1K2P7AKMA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
0
DiGi PART NUMBER
IPU80R1K2P7AKMA1-DG
UNIT PRICE
0.41
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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