IPW60R017C7XKSA1
Manufacturer Product Number:

IPW60R017C7XKSA1

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IPW60R017C7XKSA1-DG

Description:

HIGH POWER_NEW
Detailed Description:
N-Channel 600 V 109A (Tc) 446W (Tc) Through Hole PG-TO247-3-41

Inventory:

12803928
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IPW60R017C7XKSA1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
CoolMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
109A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
17mOhm @ 58.2A, 10V
Vgs(th) (Max) @ Id
4V @ 2.91mA
Gate Charge (Qg) (Max) @ Vgs
240 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9890 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
446W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-41
Package / Case
TO-247-3
Base Product Number
IPW60R017

Datasheet & Documents

Additional Information

Other Names
IPW60R017C7XKSA1-DG
448-IPW60R017C7XKSA1
SP001313542
Standard Package
30

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
IPZ60R017C7XKSA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
257
DiGi PART NUMBER
IPZ60R017C7XKSA1-DG
UNIT PRICE
14.02
SUBSTITUTE TYPE
Parametric Equivalent
DIGI Certification
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