Manufacturer Product Number:
IPW65R029CFD7XKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPW65R029CFD7XKSA1-DG
Description:
MOSFET N-CH 650V 69A TO247-3
Detailed Description:
N-Channel 650 V 69A (Tc) 305W (Tc) Through Hole PG-TO247-3
Inventory:
205 Pcs New Original In Stock
12947826
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IPW65R029CFD7XKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
CoolMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
69A (Tc)
Rds On (Max) @ Id, Vgs
29mOhm @ 35.8A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1.79mA
Gate Charge (Qg) (Max) @ Vgs
145 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7149 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
305W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3
Package / Case
TO-247-3
Base Product Number
IPW65R029
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP005413355
448-IPW65R029CFD7XKSA1
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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