IRF6603TR1
Manufacturer Product Number:

IRF6603TR1

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IRF6603TR1-DG

Description:

MOSFET N-CH 30V 27A DIRECTFET
Detailed Description:
N-Channel 30 V 27A (Ta), 92A (Tc) 3.6W (Ta), 42W (Tc) Surface Mount DIRECTFET™ MT

Inventory:

RFQ Online
12805191
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

IRF6603TR1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
HEXFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
27A (Ta), 92A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 4.5 V
Vgs (Max)
+20V, -12V
Input Capacitance (Ciss) (Max) @ Vds
6590 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3.6W (Ta), 42W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MT
Package / Case
DirectFET™ Isometric MT

Datasheet & Documents

Datasheets
IRF6603TR1

Additional Information

Other Names
SP001531594
Standard Package
1,000

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
Related Products
infineon-technologies

IPB65R125C7ATMA2

MOSFET N-CH 650V 18A TO263-3

infineon-technologies

SPW12N50C3FKSA1

MOSFET N-CH 560V 11.6A TO247-3

infineon-technologies

IRLU3114ZPBF

MOSFET N-CH 40V 42A I-PAK

infineon-technologies

IRFH7923TRPBF

MOSFET N-CH 30V 15A PQFN56