IRF6691TR1
Manufacturer Product Number:

IRF6691TR1

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IRF6691TR1-DG

Description:

MOSFET N-CH 20V 32A DIRECTFET
Detailed Description:
N-Channel 20 V 32A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT

Inventory:

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IRF6691TR1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
HEXFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
32A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
71 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
6580 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MT
Package / Case
DirectFET™ Isometric MT

Datasheet & Documents

Datasheets
IRF6691TR1

Additional Information

Other Names
SP001530888
Standard Package
1,000

Environmental & Export Classification

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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