IRF6892STR1PBF
Manufacturer Product Number:

IRF6892STR1PBF

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IRF6892STR1PBF-DG

Description:

MOSFET N-CH 25V 28A DIRECTFET
Detailed Description:
N-Channel 25 V 28A (Ta), 125A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ S3C

Inventory:

12808615
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IRF6892STR1PBF Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
HEXFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
28A (Ta), 125A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 28A, 10V
Vgs(th) (Max) @ Id
2.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
2510 pF @ 13 V
FET Feature
-
Power Dissipation (Max)
2.1W (Ta), 42W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ S3C
Package / Case
DirectFET™ Isometric S3C

Datasheet & Documents

Datasheets

Additional Information

Other Names
IRF6892STR1PBFDKR
SP001526954
IRF6892STR1PBFCT
IRF6892STR1PBFTR
IRF6892STR1PBF-DG
Standard Package
1,000

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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