Manufacturer Product Number:
IRFB11N50APBF
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IRFB11N50APBF-DG
Description:
MOSFET N-CH 500V 11A TO220AB
Detailed Description:
N-Channel 500 V 11A (Tc) 170W (Tc) Through Hole TO-220AB
Inventory:
12806089
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IRFB11N50APBF Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
HEXFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
520mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1423 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
170W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Additional Information
Other Names
448-IRFB11N50APBF
SP001563792
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IRFB11N50APBF
MANUFACTURER
Vishay Siliconix
QUANTITY AVAILABLE
2122
DiGi PART NUMBER
IRFB11N50APBF-DG
UNIT PRICE
0.98
SUBSTITUTE TYPE
Parametric Equivalent
PART NUMBER
IRFB11N50APBF-BE3
MANUFACTURER
Vishay Siliconix
QUANTITY AVAILABLE
2600
DiGi PART NUMBER
IRFB11N50APBF-BE3-DG
UNIT PRICE
1.00
SUBSTITUTE TYPE
Parametric Equivalent
DIGI Certification
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