Manufacturer Product Number:
IRFB4227PBF
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IRFB4227PBF-DG
Description:
MOSFET N-CH 200V 65A TO220AB
Detailed Description:
N-Channel 200 V 65A (Tc) 330W (Tc) Through Hole TO-220AB
Inventory:
3925 Pcs New Original In Stock
12805977
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IRFB4227PBF Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
HEXFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
24mOhm @ 46A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
98 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
4600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
330W (Tc)
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRFB4227
Datasheet & Documents
Datasheets
Additional Information
Other Names
448-IRFB4227PBF
IRFB4227PBF-DG
SP001565892
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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