ISK018NE1LM7AULA1
Manufacturer Product Number:

ISK018NE1LM7AULA1

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

ISK018NE1LM7AULA1-DG

Description:

ISK018NE1LM7AULA1 MOSFET
Detailed Description:
N-Channel 15 V 30A (Ta), 129A (Tc) 2.1W (Ta), 39W (Tc) Surface Mount PG-VSON-6-1

Inventory:

13255994
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

ISK018NE1LM7AULA1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
OptiMOS™ 7
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
15 V
Current - Continuous Drain (Id) @ 25°C
30A (Ta), 129A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 7V
Rds On (Max) @ Id, Vgs
1.8mOhm @ 20A, 7V
Vgs(th) (Max) @ Id
2V @ 106µA
Gate Charge (Qg) (Max) @ Vgs
13.6 nC @ 7 V
Vgs (Max)
±7V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 7.5 V
FET Feature
-
Power Dissipation (Max)
2.1W (Ta), 39W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-VSON-6-1
Package / Case
6-PowerVDFN

Additional Information

Other Names
SP005576350
448-ISK018NE1LM7AULA1TR
448-ISK018NE1LM7AULA1DKR
448-ISK018NE1LM7AULA1CT
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
DIGI Certification
Related Products
infineon-technologies

ISC035N10NM5LF2ATMA1

ISC035N10NM5LF2ATMA1 MOSFET

onsemi

NVBG030N120M3S

SILICON CARBIDE (SIC) MOSFET - E

onsemi

NVBG070N120M3S

SILICON CARBIDE (SIC) MOSFET-ELI

onsemi

NTBLS0D8N08XTXG

MOSFET, POWER 80V SINGLE N-CHANN