SPI11N60C3XKSA1
Manufacturer Product Number:

SPI11N60C3XKSA1

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

SPI11N60C3XKSA1-DG

Description:

MOSFET N-CH 650V 11A TO262-3
Detailed Description:
N-Channel 650 V 11A (Tc) 125W (Tc) Through Hole PG-TO262-3-1

Inventory:

12808169
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SPI11N60C3XKSA1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
CoolMOS™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3-1
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
SPI11N

Datasheet & Documents

Additional Information

Other Names
SPI11N60C3X-DG
SPI11N60C3BKSA1
SPI11N60C3IN
SPI11N60C3
SPI11N60C3XK
SPI11N60C3IN-DG
SPI11N60C3X
SP000680986
Standard Package
500

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
STI24N60M2
MANUFACTURER
STMicroelectronics
QUANTITY AVAILABLE
1180
DiGi PART NUMBER
STI24N60M2-DG
UNIT PRICE
1.07
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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