Manufacturer Product Number:
IV1Q12160T4
Product Overview
Manufacturer:
Inventchip
DiGi Electronics Part Number:
IV1Q12160T4-DG
Description:
SIC MOSFET, 1200V 160MOHM, TO-24
Detailed Description:
N-Channel 1200 V 20A (Tc) 138W (Tc) Through Hole TO-247-4
Inventory:
106 Pcs New Original In Stock
12974633
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IV1Q12160T4 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Inventchip Technology
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
195mOhm @ 10A, 20V
Vgs(th) (Max) @ Id
2.9V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 20 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
885 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
138W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
Datasheet & Documents
Datasheets
Additional Information
Other Names
4084-IV1Q12160T4
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
DIGI Certification
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