Manufacturer Product Number:
IXFQ50N60X
Product Overview
Manufacturer:
IXYS
DiGi Electronics Part Number:
IXFQ50N60X-DG
Description:
MOSFET N-CH 600V 50A TO3P
Detailed Description:
N-Channel 600 V 50A (Tc) 660W (Tc) Through Hole TO-3P
Inventory:
12820568
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IXFQ50N60X Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Littelfuse
Packaging
Tube
Series
HiPerFET™, Ultra X
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
73mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
116 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
4660 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
660W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Base Product Number
IXFQ50
Datasheet & Documents
Datasheets
Additional Information
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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