Manufacturer Product Number:
IXTH2N150
Product Overview
Manufacturer:
IXYS
DiGi Electronics Part Number:
IXTH2N150-DG
Description:
DISCMOSFET N-CH STD-HIVOLTAGE TO
Detailed Description:
N-Channel 1500 V 2A (Tc) 170W (Tc) Through Hole TO-247 (IXTH)
Inventory:
12966526
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IXTH2N150 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Littelfuse
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1500 V
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
830 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
170W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247 (IXTH)
Package / Case
TO-247-3
Base Product Number
IXTH2
Datasheet & Documents
Datasheets
Additional Information
Other Names
238-IXTH2N150
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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