IXTP2R4N120P
Manufacturer Product Number:

IXTP2R4N120P

Product Overview

Manufacturer:

IXYS

DiGi Electronics Part Number:

IXTP2R4N120P-DG

Description:

MOSFET N-CH 1200V 2.4A TO220AB
Detailed Description:
N-Channel 1200 V 2.4A (Tc) 125W (Tc) Through Hole TO-220-3

Inventory:

14 Pcs New Original In Stock
12820215
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IXTP2R4N120P Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Littelfuse
Packaging
Tube
Series
Polar
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1207 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
IXTP2

Datasheet & Documents

Datasheets
IXTP2R4N120P

Additional Information

Standard Package
50

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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