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Manufacturer Product Number:
IXTQ32N65X
Product Overview
Manufacturer:
IXYS
DiGi Electronics Part Number:
IXTQ32N65X-DG
Description:
MOSFET N-CH 650V 32A TO3P
Detailed Description:
N-Channel 650 V 32A (Tc) 500W (Tc) Through Hole TO-3P
Inventory:
RFQ Online
12819699
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IXTQ32N65X Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Littelfuse
Packaging
Tube
Series
Ultra X
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
135mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2205 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
500W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Base Product Number
IXTQ32
Datasheet & Documents
Datasheets
IXTQ32N65X
Additional Information
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IXTQ34N65X2M
MANUFACTURER
IXYS
QUANTITY AVAILABLE
0
DiGi PART NUMBER
IXTQ34N65X2M-DG
UNIT PRICE
6.40
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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