Manufacturer Product Number:
TP2635N3-G
Product Overview
Manufacturer:
Microchip Technology
DiGi Electronics Part Number:
TP2635N3-G-DG
Description:
MOSFET P-CH 350V 180MA TO92-3
Detailed Description:
P-Channel 350 V 180mA (Tj) 1W (Ta) Through Hole TO-92-3
Inventory:
376 Pcs New Original In Stock
12810010
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
TP2635N3-G Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Microchip Technology
Packaging
Bag
Series
-
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
350 V
Current - Continuous Drain (Id) @ 25°C
180mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Max) @ Id, Vgs
15Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Base Product Number
TP2635
Datasheet & Documents
Datasheets
Additional Information
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
IRFR220,118
MOSFET N-CH 200V 4.8A DPAK
BUK962R1-40E,118
MOSFET N-CH 40V 120A D2PAK
BUK7Y08-40B/C,115
MOSFET N-CH 40V 75A LFPAK56
