Manufacturer Product Number:
APT80SM120B
Product Overview
Manufacturer:
Microsemi Corporation
DiGi Electronics Part Number:
APT80SM120B-DG
Description:
SICFET N-CH 1200V 80A TO247
Detailed Description:
N-Channel 1200 V 80A (Tc) 555W (Tc) Through Hole TO-247
Inventory:
13261717
Request Quote
Quantity
Minimum 1
Minimum 1
6jJR
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
APT80SM120B Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Microsemi
Packaging
-
Series
-
Product Status
Obsolete
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
55mOhm @ 40A, 20V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
235 nC @ 20 V
Vgs (Max)
+25V, -10V
FET Feature
-
Power Dissipation (Max)
555W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Datasheet & Documents
Datasheets
Additional Information
Other Names
APT80SM120B-ND
150-APT80SM120B
Standard Package
1
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
APT22F80S
MOSFET N-CH 800V 23A D3PAK
APT48M80B2
MOSFET N-CH 800V 49A T-MAX
APT47N65SCS3G
MOSFET N-CH 650V 47A TO-247
