Manufacturer Product Number:
JAN2N6798
Product Overview
Manufacturer:
Microsemi Corporation
DiGi Electronics Part Number:
JAN2N6798-DG
Description:
MOSFET N-CH 200V 5.5A TO39
Detailed Description:
N-Channel 200 V 5.5A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39
Inventory:
12923491
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JAN2N6798 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Microsemi
Packaging
-
Series
Military, MIL-PRF-19500/557
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
420mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
42.07 nC @ 10 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
800mW (Ta), 25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-39
Package / Case
TO-205AF Metal Can
Additional Information
Other Names
150-JAN2N6798
JAN2N6798-MIL
JAN2N6798-DG
Standard Package
1
Environmental & Export Classification
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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