JAN2N6800
Manufacturer Product Number:

JAN2N6800

Product Overview

Manufacturer:

Microsemi Corporation

DiGi Electronics Part Number:

JAN2N6800-DG

Description:

MOSFET N-CH 400V 3A TO39
Detailed Description:
N-Channel 400 V 3A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39

Inventory:

12928976
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

JAN2N6800 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Microsemi
Packaging
-
Series
Military, MIL-PRF-19500/557
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
400 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.1Ohm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
34.75 nC @ 10 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
800mW (Ta), 25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-39
Package / Case
TO-205AF Metal Can

Additional Information

Other Names
JAN2N6800-DG
JAN2N6800-MIL
150-JAN2N6800
Standard Package
1

Environmental & Export Classification

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
onsemi

NTB90N02T4G

MOSFET N-CH 24V 90A D2PAK

infineon-technologies

IPD50P04P413ATMA2

MOSFET P-CH 40V 50A TO252-3

microsemi

JANTXV2N6800U

MOSFET N-CH 400V 3A 18ULCC

infineon-technologies

IPD90P04P4L04ATMA2

MOSFET P-CH 40V 90A TO252-3