Manufacturer Product Number:
PMPB29XNE,115
Product Overview
Manufacturer:
NXP USA Inc.
DiGi Electronics Part Number:
PMPB29XNE,115-DG
Description:
MOSFET N-CH 30V 5A DFN2020MD-6
Detailed Description:
N-Channel 30 V 5A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN1010B-6
Inventory:
19000 Pcs New Original In Stock
12947298
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
PMPB29XNE,115 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
NXP Semiconductors
Packaging
Bulk
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
33mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18.6 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
1150 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.7W (Ta), 12.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DFN1010B-6
Package / Case
6-XFDFN Exposed Pad
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-PMPB29XNE,115
NEXNXPPMPB29XNE,115
Standard Package
3,184
Environmental & Export Classification
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
FDPF5N50NZU
MOSFET N-CH 500V 3.9A TO220F
HUF75639S3ST
POWER FIELD-EFFECT TRANSISTOR, 5
FDMC7660S
POWER FIELD-EFFECT TRANSISTOR, 4
