2N5551TF
Manufacturer Product Number:

2N5551TF

Product Overview

Manufacturer:

onsemi

DiGi Electronics Part Number:

2N5551TF-DG

Description:

TRANS NPN 160V 0.6A TO92-3
Detailed Description:
Bipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 625 mW Through Hole TO-92-3

Inventory:

49026 Pcs New Original In Stock
12909332
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2N5551TF Technical Specifications

Category
Bipolar (BJT), Single Bipolar Transistors
Manufacturer
onsemi
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
600 mA
Voltage - Collector Emitter Breakdown (Max)
160 V
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Power - Max
625 mW
Frequency - Transition
100MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92-3
Base Product Number
2N5551

Datasheet & Documents

Additional Information

Other Names
2N5551TFDKR-DG
2N5551TF-DG
2N5551TFDKRINACTIVE
2N5551TFTR
2N5551TFDKR
2N5551TFCT
Standard Package
2,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
DIGI Certification
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