2SB1216T-E
Manufacturer Product Number:

2SB1216T-E

Product Overview

Manufacturer:

onsemi

DiGi Electronics Part Number:

2SB1216T-E-DG

Description:

TRANS PNP 100V 4A TP
Detailed Description:
Bipolar (BJT) Transistor PNP 100 V 4 A 130MHz 1 W Through Hole TP

Inventory:

12837039
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2SB1216T-E Technical Specifications

Category
Bipolar (BJT), Single Bipolar Transistors
Manufacturer
onsemi
Packaging
-
Series
-
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA, 5V
Power - Max
1 W
Frequency - Transition
130MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
TP
Base Product Number
2SB1216

Datasheet & Documents

Datasheets

Additional Information

Other Names
ONSONS2SB1216T-E
2156-2SB1216T-E-ON
Standard Package
500

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075

Alternative Models

PART NUMBER
2SB1216S-TL-E
MANUFACTURER
onsemi
QUANTITY AVAILABLE
1071
DiGi PART NUMBER
2SB1216S-TL-E-DG
UNIT PRICE
0.27
SUBSTITUTE TYPE
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