2SC3070-AE
Manufacturer Product Number:

2SC3070-AE

Product Overview

Manufacturer:

onsemi

DiGi Electronics Part Number:

2SC3070-AE-DG

Description:

NPN SILICON TRANSISTOR
Detailed Description:
Bipolar (BJT) Transistor NPN 25 V 1.2 A 250MHz 1 W Through Hole 3-MP

Inventory:

51000 Pcs New Original In Stock
12968484
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2SC3070-AE Technical Specifications

Category
Bipolar (BJT), Single Bipolar Transistors
Manufacturer
onsemi
Packaging
Bulk
Series
-
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
1.2 A
Voltage - Collector Emitter Breakdown (Max)
25 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 500mA
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 10mA, 5V
Power - Max
1 W
Frequency - Transition
250MHz
Operating Temperature
-
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
3-MP

Datasheet & Documents

Datasheets

Additional Information

Other Names
2156-2SC3070-AE
ONSSNY2SC3070-AE
Standard Package
1,401

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075
DIGI Certification
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