Home
Products
Manufacturers
About DiGi
Contact Us
Blogs & Posts
RFQ/Quote
United Kingdom
Sign in
Selective Language
Current language of your choice:
United Kingdom
Switch:
English
Europe
United Kingdom
France
Spain
Turkey
Moldova
Lithuania
Norway
Germany
Portugal
Slovakia
ltaly
Finland
Russian
Bulgaria
Denmark
Estonia
Poland
Ukraine
Slovenia
Czech
Greek
Croatia
Israel
Serbia
Belarus
Netherlands
Sweden
Montenegro
Basque
Iceland
Bosnia
Hungarian
Romania
Austria
Belgium
Ireland
Asia / Pacific
China
Vietnam
Indonesia
Thailand
Laos
Filipino
Malaysia
Korea
Japan
HongKong
TaiWan
Singapore
Pakistan
Saudi Arabia
Qatar
Kuwait
Cambodia
Myanmar
Africa,India and Middle East
United Arab Emirates
Tajikistan
Madagascar
India
Iran
DR Congo
South Africa
Egypt
Kenya
Tanzania
Ghana
Senegal
Morocco
Tunisia
South America / Oceania
New Zealand
Angola
Brazil
Mozambique
Peru
Colombia
Chile
Venezuela
Ecuador
Bolivia
Uruguay
Argentina
Paraguay
Australia
North America
United States
Haiti
Canada
Costa Rica
Mexico
About DiGi
About Us
About Us
Our Certifications
DiGi Introduction
Why DiGi
Policy
Quality Policy
Terms of use
RoHS Compliance
Return Process
Resources
Product Categories
Manufacturers
Blogs & Posts
Services
Quality Warranty
Payment Way
Global Shipment
Shipping Rates
FAQs
Manufacturer Product Number:
2SJ656
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
2SJ656-DG
Description:
MOSFET P-CH 100V 18A TO220ML
Detailed Description:
P-Channel 100 V 18A (Ta) 2W (Ta), 30W (Tc) Through Hole TO-220ML
Inventory:
RFQ Online
12836930
Request Quote
Quantity
Minimum 1
*
Company
*
Contact Name
*
Phone
*
E-mail
Delivery Address
Message
(
*
) is mandatory
We'll get back to you within 24 hours
SUBMIT
2SJ656 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
-
Series
-
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
75.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
74 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4200 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
2W (Ta), 30W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220ML
Package / Case
TO-220-3 Full Pack
Base Product Number
2SJ656
Datasheet & Documents
Datasheets
2SJ656
Additional Information
Other Names
869-1053
Standard Package
100
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IXTP18P10T
MANUFACTURER
IXYS
QUANTITY AVAILABLE
2485
DiGi PART NUMBER
IXTP18P10T-DG
UNIT PRICE
1.06
SUBSTITUTE TYPE
Similar
DIGI Certification
Related Products
FDMS86104
MOSFET N-CH 100V 7A/16A 8PQFN
2V7002KT1G
MOSFET N-CH 60V 320MA SOT23
HUF75309P3
MOSFET N-CH 55V 19A TO220-3
FCPF099N65S3
MOSFET N-CH 650V 30A TO220F