Manufacturer Product Number:
DTD113E
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
DTD113E-DG
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 350 mW Through Hole TO-92 (TO-226)
Inventory:
25000 Pcs New Original In Stock
12934311
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DTD113E Technical Specifications
Category
Bipolar (BJT), Single, Pre-Biased Bipolar Transistors
Manufacturer
onsemi
Packaging
Bulk
Series
-
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
1 kOhms
Resistor - Emitter Base (R2)
1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)
500nA
Power - Max
350 mW
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92 (TO-226)
Datasheet & Documents
Datasheets
Additional Information
Other Names
ONSONSDTD113E
2156-DTD113E
Standard Package
11,539
Environmental & Export Classification
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.21.0095
DIGI Certification
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