Manufacturer Product Number:
FCP190N65F
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
FCP190N65F-DG
Description:
MOSFET N-CH 650V 20.6A TO220-3
Detailed Description:
N-Channel 650 V 20.6A (Tc) 208W (Tc) Through Hole TO-220-3
Inventory:
1600 Pcs New Original In Stock
12845181
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FCP190N65F Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
Tube
Series
FRFET®, SuperFET® II
Product Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3225 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
FCP190
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-FCP190N65F-OS
ONSONSFCP190N65F
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
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