Home
Products
Manufacturers
About DiGi
Contact Us
Blogs & Posts
RFQ/Quote
United Kingdom
Sign in
Selective Language
Current language of your choice:
United Kingdom
Switch:
English
Europe
United Kingdom
France
Spain
Turkey
Moldova
Lithuania
Norway
Germany
Portugal
Slovakia
ltaly
Finland
Russian
Bulgaria
Denmark
Estonia
Poland
Ukraine
Slovenia
Czech
Greek
Croatia
Israel
Serbia
Belarus
Netherlands
Sweden
Montenegro
Basque
Iceland
Bosnia
Hungarian
Romania
Austria
Belgium
Ireland
Asia / Pacific
China
Vietnam
Indonesia
Thailand
Laos
Filipino
Malaysia
Korea
Japan
HongKong
TaiWan
Singapore
Pakistan
Saudi Arabia
Qatar
Kuwait
Cambodia
Myanmar
Africa,India and Middle East
United Arab Emirates
Tajikistan
Madagascar
India
Iran
DR Congo
South Africa
Egypt
Kenya
Tanzania
Ghana
Senegal
Morocco
Tunisia
South America / Oceania
New Zealand
Angola
Brazil
Mozambique
Peru
Colombia
Chile
Venezuela
Ecuador
Bolivia
Uruguay
Argentina
Paraguay
Australia
North America
United States
Haiti
Canada
Costa Rica
Mexico
About DiGi
About Us
About Us
Our Certifications
DiGi Introduction
Why DiGi
Policy
Quality Policy
Terms of use
RoHS Compliance
Return Process
Resources
Product Categories
Manufacturers
Blogs & Posts
Services
Quality Warranty
Payment Way
Global Shipment
Shipping Rates
FAQs
Manufacturer Product Number:
FDFME3N311ZT
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
FDFME3N311ZT-DG
Description:
MOSFET N-CH 30V 1.8A 6MICROFET
Detailed Description:
N-Channel 30 V 1.8A (Ta) 1.4W (Ta) Surface Mount 6-MicroFET (1.6x1.6)
Inventory:
RFQ Online
12850488
Request Quote
Quantity
Minimum 1
*
Company
*
Contact Name
*
Phone
*
E-mail
Delivery Address
Message
(
*
) is mandatory
We'll get back to you within 24 hours
SUBMIT
FDFME3N311ZT Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
-
Series
PowerTrench®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
299mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.4 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
75 pF @ 15 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
1.4W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-MicroFET (1.6x1.6)
Package / Case
6-UFDFN Exposed Pad
Base Product Number
FDFME3
Datasheet & Documents
Datasheets
FDFME3N311ZT
Additional Information
Other Names
FDFME3N311ZT-DG
FDFME3N311ZTTR
FDFME3N311ZTCT
FDFME3N311ZTDKR
Standard Package
5,000
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
SSM6H19NU,LF
MANUFACTURER
Toshiba Semiconductor and Storage
QUANTITY AVAILABLE
54777
DiGi PART NUMBER
SSM6H19NU,LF-DG
UNIT PRICE
0.07
SUBSTITUTE TYPE
Similar
DIGI Certification
Related Products
HUFA76409D3ST
MOSFET N-CH 60V 18A TO252AA
FDMC86102
MOSFET N-CH 100V 7A/20A POWER33
FDC5612
MOSFET N-CH 60V 4.3A SUPERSOT6
FQA32N20C
MOSFET N-CH 200V 32A TO3PN