FQI4N90TU
Manufacturer Product Number:

FQI4N90TU

Product Overview

Manufacturer:

onsemi

DiGi Electronics Part Number:

FQI4N90TU-DG

Description:

MOSFET N-CH 900V 4.2A I2PAK
Detailed Description:
N-Channel 900 V 4.2A (Tc) 3.13W (Ta), 140W (Tc) Through Hole TO-262 (I2PAK)

Inventory:

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FQI4N90TU Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
-
Series
QFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.3Ohm @ 2.1A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 140W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
FQI4N90

Datasheet & Documents

Datasheets
FQI4N90TU Datasheet

Additional Information

Other Names
2156-FQI4N90TU-OS
ONSONSFQI4N90TU
2832-FQI4N90TU
Standard Package
1,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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