FQP19N20C_F080
Manufacturer Product Number:

FQP19N20C_F080

Product Overview

Manufacturer:

onsemi

DiGi Electronics Part Number:

FQP19N20C_F080-DG

Description:

MOSFET N-CH 200V 19A TO220-3
Detailed Description:
N-Channel 200 V 19A (Tc) 139W (Tc) Through Hole TO-220-3

Inventory:

12850148
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

FQP19N20C_F080 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
-
Series
QFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
170mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
53 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1080 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
139W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
FQP1

Additional Information

Standard Package
50

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
IRF200B211
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
4746
DiGi PART NUMBER
IRF200B211-DG
UNIT PRICE
0.51
SUBSTITUTE TYPE
Similar
DIGI Certification
Related Products
onsemi

FCA36N60NF

MOSFET N-CH 600V 34.9A TO3PN

onsemi

FDB3652

MOSFET N-CH 100V 9A/61A D2PAK

onsemi

FDS2734

MOSFET N-CH 250V 3A 8SOIC

onsemi

EMH1405-P-TL-H

MOSFET N-CH 30V 8.5A EMH8