Manufacturer Product Number:
NDD60N900U1-1G
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
NDD60N900U1-1G-DG
Description:
MOSFET N-CH 600V 5.7A IPAK
Detailed Description:
N-Channel 600 V 5.7A (Tc) 74W (Tc) Through Hole IPAK
Inventory:
12858045
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NDD60N900U1-1G Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
-
Series
-
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
360 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
74W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
NDD60
Datasheet & Documents
Datasheets
Additional Information
Other Names
ONSONSNDD60N900U1-1G
2156-NDD60N900U1-1G-ON
Standard Package
75
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IPS80R1K2P7AKMA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
0
DiGi PART NUMBER
IPS80R1K2P7AKMA1-DG
UNIT PRICE
0.47
SUBSTITUTE TYPE
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