Manufacturer Product Number:
NTD12N10-1G
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
NTD12N10-1G-DG
Description:
MOSFET N-CH 100V 12A IPAK
Detailed Description:
N-Channel 100 V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Through Hole I-PAK
Inventory:
12842657
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NTD12N10-1G Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
-
Series
-
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
165mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.28W (Ta), 56.6W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
NTD12
Datasheet & Documents
Datasheets
Additional Information
Other Names
=NTD12N10
2156-NTD12N10-1G-ON
ONSONSNTD12N10-1G
Standard Package
75
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
PHT6NQ10T,135
MANUFACTURER
Nexperia USA Inc.
QUANTITY AVAILABLE
4949
DiGi PART NUMBER
PHT6NQ10T,135-DG
UNIT PRICE
0.28
SUBSTITUTE TYPE
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