Manufacturer Product Number:
NTH4L160N120SC1
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
NTH4L160N120SC1-DG
Description:
SICFET N-CH 1200V 17.3A TO247
Detailed Description:
N-Channel 1200 V 17.3A (Tc) 111W (Tc) Through Hole TO-247-4L
Inventory:
1327 Pcs New Original In Stock
12938838
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NTH4L160N120SC1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
17.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
224mOhm @ 12A, 20V
Vgs(th) (Max) @ Id
4.3V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 20 V
Vgs (Max)
+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
665 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
111W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4
Base Product Number
NTH4L160
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-NTH4L160N120SC1
488-NTH4L160N120SC1
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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