NTHL025N065SC1
Manufacturer Product Number:

NTHL025N065SC1

Product Overview

Manufacturer:

onsemi

DiGi Electronics Part Number:

NTHL025N065SC1-DG

Description:

SIC MOS TO247-3L 650V
Detailed Description:
N-Channel 650 V 99A (Tc) 348W (Tc) Through Hole TO-247-3

Inventory:

208 Pcs New Original In Stock
12986941
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NTHL025N065SC1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
99A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
28.5mOhm @ 45A, 18V
Vgs(th) (Max) @ Id
4.3V @ 15.5mA
Gate Charge (Qg) (Max) @ Vgs
164 nC @ 18 V
Vgs (Max)
+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds
3480 pF @ 325 V
FET Feature
-
Power Dissipation (Max)
348W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3

Datasheet & Documents

Datasheets
NTHL025N065SC1

Additional Information

Other Names
488-NTHL025N065SC1
Standard Package
450

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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