Manufacturer Product Number:
PJD4NA65H_L2_00001
Product Overview
Manufacturer:
Panjit International Inc.
DiGi Electronics Part Number:
PJD4NA65H_L2_00001-DG
Description:
650V N-CHANNEL MOSFET
Detailed Description:
N-Channel 650 V 3A (Ta) 34W (Tc) Surface Mount TO-252
Inventory:
12973026
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PJD4NA65H_L2_00001 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
PANJIT
Packaging
Tape & Reel (TR)
Series
-
Product Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.75Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16.1 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
423 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
34W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
PJD4NA65
Datasheet & Documents
Additional Information
Other Names
3757-PJD4NA65H_L2_00001DKR
3757-PJD4NA65H_L2_00001CT
3757-PJD4NA65H_L2_00001TR
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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