2SA812B-T1B-AT
Manufacturer Product Number:

2SA812B-T1B-AT

Product Overview

Manufacturer:

Renesas

DiGi Electronics Part Number:

2SA812B-T1B-AT-DG

Description:

2SA812B-T1B-AT - PNP SILICON EPI
Detailed Description:
Bipolar (BJT) Transistor PNP 50 V 100 mA 180MHz 200 mW Surface Mount 3-MINIMOLD

Inventory:

201000 Pcs New Original In Stock
12976870
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

2SA812B-T1B-AT Technical Specifications

Category
Bipolar (BJT), Single Bipolar Transistors
Manufacturer
Renesas Electronics Corporation
Packaging
Bulk
Series
-
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
90 @ 1mA, 6V
Power - Max
200 mW
Frequency - Transition
180MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
3-MINIMOLD

Additional Information

Other Names
2156-2SA812B-T1B-AT
Standard Package
4,121

Environmental & Export Classification

RoHS Status
RoHS non-compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
DIGI Certification
Related Products
onsemi

SBC847BLT1G-M01

SBC847 - TRANS BJTS NPN 45V

onsemi

MJ15020

POWER BIPOLAR TRANSISTOR, 4A, 25

renesas-electronics-america

2SB1261(1)-AZ

2SB1261 - PNP SILICON EPITAXIAL

central-semiconductor

MJ6503 TIN/LEAD

TRANS PNP 400V 8A TO3