Manufacturer Product Number:
H5N2305P-E
Product Overview
Manufacturer:
Renesas Electronics Corporation
DiGi Electronics Part Number:
H5N2305P-E-DG
Description:
POWER FIELD-EFFECT TRANSISTOR
Detailed Description:
N-Channel 230 V 35A (Ta) 60W (Tc) Through Hole TO-3PFM
Inventory:
310 Pcs New Original In Stock
12955007
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H5N2305P-E Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Renesas Electronics Corporation
Packaging
Bulk
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
230 V
Current - Continuous Drain (Id) @ 25°C
35A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
700mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 10 V
Vgs (Max)
±30V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
150°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-3PFM
Package / Case
TO-3PFM, SC-93-3
Datasheet & Documents
Datasheets
Additional Information
Other Names
RENRNSH5N2305P-E
2156-H5N2305P-E
Standard Package
42
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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