Manufacturer Product Number:
HS54095TZ-E
Product Overview
Manufacturer:
Renesas Electronics Corporation
DiGi Electronics Part Number:
HS54095TZ-E-DG
Description:
MOSFET N-CH 600V 200MA TO92-3
Detailed Description:
N-Channel 600 V 200mA (Ta) 750mW (Ta) Through Hole TO-92-3
Inventory:
12860299
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HS54095TZ-E Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Renesas Electronics Corporation
Packaging
-
Series
-
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
16.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
4.8 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
66 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
750mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 Short Body
Datasheet & Documents
Datasheets
Additional Information
Standard Package
2,500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Alternative Models
PART NUMBER
STQ1NK60ZR-AP
MANUFACTURER
STMicroelectronics
QUANTITY AVAILABLE
7349
DiGi PART NUMBER
STQ1NK60ZR-AP-DG
UNIT PRICE
0.17
SUBSTITUTE TYPE
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