Manufacturer Product Number:
NP82N10PUF-E1-AY
Product Overview
Manufacturer:
Renesas
DiGi Electronics Part Number:
NP82N10PUF-E1-AY-DG
Description:
NP82N10PUF-E1-AY - MOS FIELD EFF
Detailed Description:
N-Channel 100 V 82A (Tc) 1.8W (Ta), 150W (Tc) Surface Mount TO-263-3
Inventory:
6400 Pcs New Original In Stock
12976878
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NP82N10PUF-E1-AY Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Renesas Electronics Corporation
Packaging
Bulk
Series
-
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
82A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5.8V, 10V
Rds On (Max) @ Id, Vgs
15mOhm @ 41A, 10V
Vgs(th) (Max) @ Id
3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
96 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4350 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta), 150W (Tc)
Operating Temperature
175°C
Mounting Type
Surface Mount
Supplier Device Package
TO-263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Additional Information
Other Names
2156-NP82N10PUF-E1-AY
Standard Package
121
Environmental & Export Classification
RoHS Status
RoHS non-compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IRF3710STRLPBF
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
15343
DiGi PART NUMBER
IRF3710STRLPBF-DG
UNIT PRICE
0.73
SUBSTITUTE TYPE
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