Manufacturer Product Number:
NP89N055NUK-S18-AY
Product Overview
Manufacturer:
Renesas Electronics Corporation
DiGi Electronics Part Number:
NP89N055NUK-S18-AY-DG
Description:
MOSFET N-CH 55V 90A TO262
Detailed Description:
N-Channel 55 V 90A (Tc) 1.8W (Ta), 147W (Tc) Through Hole TO-262
Inventory:
12855354
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NP89N055NUK-S18-AY Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Renesas Electronics Corporation
Packaging
-
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.4mOhm @ 45A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
102 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta), 147W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Full Pack, I2PAK
Base Product Number
NP89N055
Datasheet & Documents
Datasheets
Additional Information
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IPI040N06N3GXKSA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
500
DiGi PART NUMBER
IPI040N06N3GXKSA1-DG
UNIT PRICE
0.83
SUBSTITUTE TYPE
Similar
DIGI Certification
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