Manufacturer Product Number:
R6009JND3TL1
Product Overview
Manufacturer:
Rohm Semiconductor
DiGi Electronics Part Number:
R6009JND3TL1-DG
Description:
MOSFET N-CH 600V 9A TO252
Detailed Description:
N-Channel 600 V 9A (Tc) 125W (Tc) Surface Mount TO-252
Inventory:
2490 Pcs New Original In Stock
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R6009JND3TL1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
585mOhm @ 4.5A, 15V
Vgs(th) (Max) @ Id
7V @ 1.38mA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 15 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
645 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
R6009
Datasheet & Documents
Datasheets
Additional Information
Other Names
R6009JND3TL1TR
R6009JND3TL1DKR
R6009JND3TL1CT
Standard Package
2,500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
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