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Manufacturer Product Number:
RCD100N19TL
Product Overview
Manufacturer:
Rohm Semiconductor
DiGi Electronics Part Number:
RCD100N19TL-DG
Description:
MOSFET N-CH 190V 10A CPT3
Detailed Description:
N-Channel 190 V 10A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3
Inventory:
1108 Pcs New Original In Stock
13526992
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RCD100N19TL Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Cut Tape (CT)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
190 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
182mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
850mW (Ta), 20W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
CPT3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
RCD100
Datasheet & Documents
Datasheets
RCD100N19TL
Additional Information
Other Names
RCD100N19TLTR
RCD100N19TLDKR
RCD100N19TLCT
Standard Package
2,500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
RD3S100CNTL1
MANUFACTURER
Rohm Semiconductor
QUANTITY AVAILABLE
2256
DiGi PART NUMBER
RD3S100CNTL1-DG
UNIT PRICE
0.88
SUBSTITUTE TYPE
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