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Manufacturer Product Number:
RQ3E080BNTB
Product Overview
Manufacturer:
Rohm Semiconductor
DiGi Electronics Part Number:
RQ3E080BNTB-DG
Description:
MOSFET N-CH 30V 8A 8HSMT
Detailed Description:
N-Channel 30 V 8A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
Inventory:
40431 Pcs New Original In Stock
13527206
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RQ3E080BNTB Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
15.2mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
14.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
660 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2W (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-HSMT (3.2x3)
Package / Case
8-PowerVDFN
Base Product Number
RQ3E080
Datasheet & Documents
Datasheets
RQ3E080BNTB
HSMT8 TB Taping Spec
Additional Information
Other Names
RQ3E080BNTBTR
RQ3E080BNTBDKR
RQ3E080BNTBCT
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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