RQ3E080BNTB
Manufacturer Product Number:

RQ3E080BNTB

Product Overview

Manufacturer:

Rohm Semiconductor

DiGi Electronics Part Number:

RQ3E080BNTB-DG

Description:

MOSFET N-CH 30V 8A 8HSMT
Detailed Description:
N-Channel 30 V 8A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

Inventory:

40431 Pcs New Original In Stock
13527206
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RQ3E080BNTB Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
15.2mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
14.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
660 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2W (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-HSMT (3.2x3)
Package / Case
8-PowerVDFN
Base Product Number
RQ3E080

Datasheet & Documents

Datasheets
RQ3E080BNTB HSMT8 TB Taping Spec

Additional Information

Other Names
RQ3E080BNTBTR
RQ3E080BNTBDKR
RQ3E080BNTBCT
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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