RQ3E180BNTB
Manufacturer Product Number:

RQ3E180BNTB

Product Overview

Manufacturer:

Rohm Semiconductor

DiGi Electronics Part Number:

RQ3E180BNTB-DG

Description:

MOSFET N-CHANNEL 30V 39A 8HSMT
Detailed Description:
N-Channel 30 V 39A (Tc) 2W (Ta), 20W (Tc) Surface Mount 8-HSMT (3.2x3)

Inventory:

5274 Pcs New Original In Stock
13527282
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RQ3E180BNTB Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.9mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3500 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2W (Ta), 20W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-HSMT (3.2x3)
Package / Case
8-PowerVDFN
Base Product Number
RQ3E180

Datasheet & Documents

Datasheets
RQ3E180BN Datasheet HSMT8 TB Taping Spec

Additional Information

Other Names
RQ3E180BNTBTR
RQ3E180BNTBDKR
RQ3E180BNTBCT
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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