RS1E200BNTB
Manufacturer Product Number:

RS1E200BNTB

Product Overview

Manufacturer:

Rohm Semiconductor

DiGi Electronics Part Number:

RS1E200BNTB-DG

Description:

MOSFET N-CH 30V 20A 8HSOP
Detailed Description:
N-Channel 30 V 20A (Ta), 68A (Tc) 3W (Ta), 25W (Tc) Surface Mount 8-HSOP

Inventory:

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RS1E200BNTB Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
20A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
59 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3100 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3W (Ta), 25W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-HSOP
Package / Case
8-PowerTDFN
Base Product Number
RS1E

Datasheet & Documents

Datasheets
RS1E200BNTB HSMT8 TB Taping Spec

Additional Information

Other Names
RS1E200BNTBTR
RS1E200BNTBDKR
RS1E200BNTBCT
Standard Package
2,500

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

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