Manufacturer Product Number:
SCT3120AW7TL
Product Overview
Manufacturer:
Rohm Semiconductor
DiGi Electronics Part Number:
SCT3120AW7TL-DG
Description:
SICFET N-CH 650V 21A TO263-7
Detailed Description:
N-Channel 650 V 21A (Tc) 100W Surface Mount TO-263-7
Inventory:
812 Pcs New Original In Stock
12977940
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SCT3120AW7TL Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Rds On (Max) @ Id, Vgs
156mOhm @ 6.7A, 18V
Vgs(th) (Max) @ Id
5.6V @ 3.33mA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 18 V
Vgs (Max)
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
460 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
100W
Operating Temperature
175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number
SCT3120
Datasheet & Documents
Datasheets
Additional Information
Other Names
846-SCT3120AW7TLTR
846-SCT3120AW7TLDKR
846-SCT3120AW7TLCT
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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