STB7NK80Z-1
Manufacturer Product Number:

STB7NK80Z-1

Product Overview

Manufacturer:

STMicroelectronics

DiGi Electronics Part Number:

STB7NK80Z-1-DG

Description:

MOSFET N-CH 800V 5.2A I2PAK
Detailed Description:
N-Channel 800 V 5.2A (Tc) 125W (Tc) Through Hole I2PAK

Inventory:

RFQ Online
12875838
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STB7NK80Z-1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Packaging
Tube
Series
SuperMESH™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.8Ohm @ 2.6A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1138 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
STB7NK80

Datasheet & Documents

Datasheets
ST(B,P)7NK80Z(-1,FP)

Additional Information

Other Names
STB7NK80Z-1-DG
497-12539-5
-497-12539-5
Standard Package
1,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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